Information om | Engelska ordet ANTIMONIDE

Exempel på hur man kan använda ANTIMONIDE i en mening

• They are usually made from germanium, but can also be made from gallium arsenide, gallium antimonide (GaSb) and silicon materials.
• The second thread is set at the University of California, San Diego (UCSD), in La Jolla, California in 1962, where a young scientist, Gordon Bernstein, discovers anomalous noise in a physics experiment relating to spontaneous resonance and indium antimonide.
• An experiment called Berolina used the Splav furnace to process an ampoule of bismuth and antimonide with the material between two plates in the ampoule.
• For Red Top, the all-aspect lead telluride (PbTe) seeker developed for Blue Vesta was replaced by a much less expensive indium antimonide (InSb) system known as "Violet Banner".
• Some examples of crystal field excitations are dd-transitions on a copper atom that is surrounded by an octahedron of oxygen atoms, or ff-transitions on the uranium atom in uranium antimonide.
• Subsequently, it was studied in semiconductors such as indium antimonide (InSb), germanium (Ge) and indium arsenide (InAs) by workers in West Germany, Ukraine (Institute of Semiconductor Physics, Kyiv), Japan (Chiba University) and the United States.
• In 2018, a research team at Delft University of Technology claimed that indium antimonide nanowires showed potential application in creating Majorana zero mode quasiparticles for use in quantum computing; Microsoft opened a laboratory at the university to further this research, however Delft later retracted the paper.
• Many compound semiconductors such as gallium arsenide, β-silicon carbide, and indium antimonide adopt the analogous zincblende structure, where each atom has nearest neighbors of an unlike element.
• Infrared-sensitive materials commonly used in IR detector arrays include mercury cadmium telluride (HgCdTe, "MerCad", or "MerCadTel"), indium antimonide (InSb, pronounced "Inns-Bee"), indium gallium arsenide (InGaAs, pronounced "Inn-Gas"), and vanadium(V) oxide (VOx, pronounced "Vox").
• Like indium antimonide, aluminium antimonide, and gallium antimonide, it is a semiconducting intermetallic compound.
• The acquisition provided the group with in-house production of gallium arsenide (GaAs) and indium phosphide (InP) substrates as well as adding capabilities for gallium antimonide (GaSb) and indium antimonide (InSb) for infrared applications.
• Related compounds include the phosphide carbides, germanide phosphides, nitride silicides, and antimonide silicides.
• Related compounds include the arsenide sulfides, arsenide selenides, antimonide tellurides, and phosphide tellurides.
• GaAsSb films have been grown by molecular beam epitaxy (MBE), metalorganic vapor phase epitaxy (MOVPE) and liquid phase epitaxy (LPE) on gallium arsenide, gallium antimonide and indium phosphide substrates.
• InAsSb films have been grown by molecular beam epitaxy (MBE), metalorganic vapor phase epitaxy (MOVPE) and liquid phase epitaxy (LPE) on gallium arsenide and gallium antimonide substrates.

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