Anagram & Information om | Engelska ordet BJT

Exempel på hur man kan använda BJT i en mening

• A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers.
• ECL uses an overdriven bipolar junction transistor (BJT) differential amplifier with single-ended input and limited emitter current to avoid the saturated (fully on) region of operation and the resulting slow turn-off behavior.
• PTAT circuits using either BJT or CMOS transistors are widely used in temperature sensors (where we want the output to vary with temperature), and also in bandgap voltage references and other temperature-compensating circuits (where we want the same output at every temperature).
• In electronics, a common collector amplifier (also known as an emitter follower) is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a voltage buffer.
• More complex circuit components can be created by further combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in the form n–p–n or p–n–p.
• For power semiconductor devices (such as BJT, MOSFET, thyristor or IGBT), the safe operating area (SOA) is defined as the voltage and current conditions over which the device can be expected to operate without self-damage.
• A transistor is a valve in which a diaphragm, controlled by a low-current signal (either constant current for a BJT or constant pressure for a FET), moves a plunger which affects the current through another section of pipe.
• The principal difference between the BJT and HBT is in the use of differing semiconductor materials for the emitter-base junction and the base-collector junction, creating a heterojunction.
• Opto-isolator, opto-coupler, photo-coupler – photodiode, BJT, JFET, SCR, TRIAC, zero-crossing TRIAC, open collector IC, CMOS IC, solid state relay (SSR).
• The insulated-gate bipolar transistor (IGBT), which combines elements of both the power MOSFET and the bipolar junction transistor (BJT), was developed by Jayant Baliga at General Electric between 1977 and 1979.
• p-n junction diode, Zener diode, tunnel diode, BJT, JFET, MOS capacitor, MOSFET, LED, p-I-n and avalanche photo diode, LASERs.
• A solid-state H-bridge is typically constructed using opposite polarity devices, such as PNP bipolar junction transistors (BJT) or P-channel MOSFETs connected to the high voltage bus and NPN BJTs or N-channel MOSFETs connected to the low voltage bus.
• The NPN BJT (n-type bipolar junction transistor) and nMOS (n-type metal oxide semiconductor field effect transistor) have greater conductance than their PNP and pMOS relatives, so may be more commonly used for these outputs.
• Besides modules that contain a single power electronic switch (as MOSFET, IGBT, BJT, Thyristor, GTO or JFET) or diode, classical power modules contain multiple semiconductor dies that are connected to form an electrical circuit of a certain structure, called topology.
• Flash ADCs have been implemented in many technologies, varying from silicon-based bipolar (BJT) and complementary metal–oxide FETs (CMOS) technologies to rarely used III-V technologies.
• A parasitic NPN bipolar junction transistor (BJT) is thus formed with the drain (n-type) acting as the collector, the base/source combination (n-type) as the emitter, and the substrate (p-type) as the base.
• The main difference of the HEBT from the Heterojunction bipolar transistor (HBT) is that the emitter–base interface is the same as in a bipolar junction transistor (BJT) with the blocking energy gap being moved back into the emitter bulk region.
• Namely, one must measure the output conductance and reverse transconductance, both of which are variables that depend on the voltage and flow of current through the BJT, and calculate the minority carrier transit time, which is determined by the width of the quasi-neutral base (QNB) of the BJT, and the diffusion coefficient; a constant that quantifies the atomic migration within the BJT.
• Negative feedback causes the opamp to output enough voltage on the base-emitter junction of the bipolar junction transistor (BJT) to ensure that all available input current is drawn through the collector of the BJT, so the output voltage is then referenced relative to the true ground of the transistor's base rather than the virtual ground.
• p-n junction diode, Zener diode, tunnel diode, BJT, JFET, MOS capacitor, MOSFET, LED, p-i-n and avalanche photo diode, LASERs.

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